Illumination device

ABSTRACT

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a Continuation in Part application of Ser. No. 13/904,038, filedon May 29, 2013.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor light emitting elementand an illumination device thereof, and more particularly, to asemiconductor light emitting element providing light inmulti-directions, and an illumination device including the semiconductorlight emitting element.

2. Description of the Prior Art

A light beam emitted from a light emitting diode (LED) is a kind ofdirectional light source, which is different from a dispersive lightsource of a conventional bulb. Accordingly, applications of LED arelimited. For instance, the conventional LED cannot or may be hard toprovide required lighting effect for indoor and outdoor illuminationapplications. Additionally, conventional LED illumination devices emitlight beams from a single side and luminous efficiency of theconventional LED illumination device is relatively low accordingly.

SUMMARY OF THE INVENTION

It is one of the objectives of the present invention to provide asemiconductor light emitting element providing light inmulti-directions, an illumination device including the semiconductorlight emitting element, and a device frame of the illumination device.The purposes of luminous efficiency enhancement, light shapeimprovement, and cost reduction may then be achieved.

A preferred embodiment of the present invention provides a semiconductorlight emitting element. The semiconductor light emitting elementincludes a transparent substrate and a plurality of light emitting diode(LED) structures. The transparent substrate has a support surface and asecond main surface disposed opposite to each other. At least some ofthe LED structures are disposed on the support surface and form a firstmain surface where light emitted from with at least a part of thesupport surface without the LED structures. Each of the LED structuresincludes a first electrode and a second electrode. Light emitted from atleast one of the LED structures passes through the transparent substrateand emerges from the second main surface.

A preferred embodiment of the present invention provides an illuminationdevice. The illumination device includes at least one semiconductorlight emitting element and a supporting base. The semiconductor lightemitting element includes a transparent substrate and a plurality of LEDstructures. The transparent substrate has a support surface and a secondmain surface disposed opposite to each other. At least some of the LEDstructures are disposed on the support surface and form a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structures. Each of the LED structures includesa first electrode and a second electrode. Light emitted from at leastone of the LED structures passes through the transparent substrate andemerges from the second main surface. The semiconductor light emittingelement is disposed on the supporting base, and a first angle may existbetween the semiconductor light emitting element and the supportingbase.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate and at least one LED structure.The transparent substrate has a support surface and a second mainsurface disposed opposite to each other. The LED structure is disposedon the support surface and forms a first main surface where lightemitted from with at least a part of the support surface without the LEDstructure. The LED structure includes a first electrode and a secondelectrode. The LED structure has a beam angle greater than 180 degrees,and at least a part of light beams emitted from the LED structure passthrough the transparent substrate and emerge from the second mainsurface.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate and at least one LED structure.A material of the transparent substrate includes sapphire, and thetransparent substrate has a support surface and a second main surfacedisposed opposite to each other. The LED structure is disposed on thesupport surface The LED structure has a beam angle greater than 180degrees. At least a part of light beams emitted from the LED structurepass through the transparent substrate and emerge from the second mainsurface.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure anda wavelength conversion layer. The transparent substrate has a supportsurface and a second main surface disposed opposite to each other. TheLED structure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least apart of light beams emitted fromthe LED structure pass through the transparent substrate and emerge fromthe second main surface. The wavelength conversion layer is at leastdisposed on the LED structure or the second main surface. The wavelengthconversion layer at least partially absorbs a light beam emitted fromthe LED structure and coverts the light beam into another light beamshaving different wavelength range.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate and a plurality of LEDstructures. The transparent substrate has a support surface and a secondmain surface disposed opposite to each other. The LED structures aredisposed on the support surface. A light emitting surface of each LEDstructure uncovered by the transparent substrate and at least a part ofthe support surface without the LED structures form a first main surfacewhere light emitted from. Each of the LED structures has a beam anglegreater than 180 degrees. Light emitted from at least one of the LEDstructures passes through the transparent substrate and emerges from thesecond main surface. An area of the first main surface or an area of thesecond main surface is larger than 5 times of a total area formed fromat least one of the light emitting surfaces of each LED structure.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one diamond-likecarbon (DLC) film, and at least one LED structure. The transparentsubstrate has a support surface and a second main surface disposedopposite to each other. The DLC film is disposed on the transparentsubstrate. The LED structure is disposed on the support surface. A lightemitting surface of the LED structure uncovered by the transparentsubstrate and at least a part of the support surface without the LEDstructure forma first main surface where light emitted from. The LEDstructure has a beam angle greater than 180 degrees, and at least a partof light beams emitted from the LED structure pass through thetransparent substrate and emerge from the second main surface.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure anda reflector. The transparent substrate has a support surface and asecond main surface disposed opposite to each other. The reflector isdisposed on the second main surface. The LED structure is disposed onthe support surface. A light emitting surface of the LED structureuncovered by the transparent substrate and at least a part of thesupport surface without the LED structure form a first main surfacewhere light emitted from. The LED structure has a beam angle greaterthan 180 degree.

Another preferred embodiment of the present invention provides asemiconductor light emitting element. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure, afirst connecting electrode and a second connecting electrode. Thetransparent substrate has a support surface and a second main surfacedisposed opposite to each other. The LED structure is disposed on thesupport surface and forms a first main surface where light emitted fromwith at least a part of the support surface without the LED structure.The LED structure has a beam angle greater than 180 degrees, and atleast a part of light beams emitted from the LED structure pass throughthe transparent substrate and are emitted from the second main surface.The first connecting electrode and the second connecting electrode arerespectively disposed on different sides of the transparent substrate.The first connecting electrode and the second connecting electrode areelectrically connected to the LED structure.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a semiconductorlight emitting element and a support. The semiconductor light emittingelement includes a transparent substrate, at least one LED structure, afirst connecting electrode and a second connecting electrode. Thetransparent substrate has a support surface and a second main surfacedisposed opposite to each other. The LED structure is disposed on thesupport surface and forms a first main surface where light emitted fromwith at least a part of the support surface without the LED structure.The LED structure has a beam angle greater than 180 degrees, and atleast a part of light beams emitted from the LED structure pass throughthe transparent substrate and are emitted from the second main surface.The first connecting electrode and the second connecting electrode arerespectively disposed on different sides of the transparent substrate.The first connecting electrode and the second connecting electrode areelectrically connected to the LED structure. The support includes atleast one opening, and the semiconductor light emitting element isdisposed correspondingly to the opening.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a plurality ofsemiconductor light emitting elements and a device frame. Each of thesemiconductor light emitting elements includes a transparent substrate,at least one LED structure, a first connecting electrode and a secondconnecting electrode. The transparent substrate has a support surfaceand a second main surface disposed opposite to each other. The LEDstructure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least a part of light beams emittedfrom the LED structure pass through the transparent substrate and areemitted from the second main surface. The first connecting electrode andthe second connecting electrode are respectively disposed on differentsides of the transparent substrate. The first connecting electrode andthe second connecting electrode are electrically connected to the LEDstructure. The device frame includes a supporting base and a pluralityof supports extending outward from the supporting base. Each of thesupports includes at least one opening, and the semiconductor lightemitting elements are disposed correspondingly to at least some of theopenings.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a plurality ofsemiconductor light emitting elements and a light bar. Each of thesemiconductor light emitting elements includes a transparent substrate,at least one LED structure, a first connecting electrode and a secondconnecting electrode. The transparent substrate has a support surfaceand a second main surface disposed opposite to each other. The LEDstructure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least a part of light beams emittedfrom the LED structure pass through the transparent substrate and areemitted from the second main surface. The first connecting electrode andthe second connecting electrode are respectively disposed on differentsides of the transparent substrate. The first connecting electrode andthe second connecting electrode are electrically connected to the LEDstructure. The light bar includes a plurality of openings. The light barhas an extending direction, and the openings are disposed along theextending direction. The semiconductor light emitting elements aredisposed correspondingly to at least some of the openings.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes a plurality ofsemiconductor light emitting elements and a supporting base. Each of thesemiconductor light emitting elements includes a transparent substrate,at least one LED structure, a first connecting electrode and a secondconnecting electrode. The transparent substrate has a support surfaceand a second main surface disposed opposite to each other. The LEDstructure is disposed on the support surface and forms a first mainsurface where light emitted from with at least a part of the supportsurface without the LED structure. The LED structure has a beam anglegreater than 180 degrees, and at least a part of light beams emittedfrom the LED structure pass through the transparent substrate and areemitted from the second main surface. The first connecting electrode andthe second connecting electrode are respectively disposed on differentsides of the transparent substrate. The first connecting electrode andthe second connecting electrode are electrically connected to the LEDstructure. The supporting base includes a plurality of openings. Theopenings are disposed as an array. The semiconductor light emittingelements are disposed correspondingly to at least some of the openings.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes at least one lightemitting element, a supporting base and at least one support. The lightemitting element is disposed on the support, and the support is coupledto the supporting base. The support is inclined that at least a part ofthe support is more near to a central axis of the supporting base. Atleast a part of the support is inclined inward or outward relative tothe central axis of the supporting base, and a first angle between thelight emitting element and the supporting base may range from 45 degreesto 75 degrees, such that the luminance of the light illumination devicenear to the central axis of the supporting base is increased.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes at least one lightemitting element, a supporting base and at least one support. Thesupport includes a first connected portion and a second connectedportion. One end of the second connected portion is disposed on thesupporting base, and the other end of the second connected portion isconnected to one end of the first connected portion. The light emittingelement is disposed on the other end of the first connected portion. Thefirst connected portion extends inward or outward relative to a centralaxis of the supporting base and is rotatably connected to the secondconnected portion. The second connected portion is rotatable relative tothe supporting base. A second angle exists between the first connectedportion and the second connected portion ranges for increasing theluminance near to the central axis. A third angle between the secondconnected portion and the supporting base ranges from 45 degrees to 85degrees for increasing the luminance near to the central axis.

Another preferred embodiment of the present invention provides anillumination device. The illumination device includes at least one lightemitting element, a supporting base and at least one support. Thesupport is flexible to form an arc-shaped structure, a parabolicstructure or an ellipse-shaped structure. The illumination device is acrystal lamp.

Another preferred embodiment of the present invention provides a deviceframe of an illumination device. The device frame includes a supportingbase and a plurality of supports. Each of the supports extends from thesupporting base. Each of the supports includes at least one opening anda plurality of electrodes disposed on two sides of the opening.

In the illumination device of the present invention, the LED structureis fixed on the transparent substrate, and the transparent substrateallows the light beam emitted by the LED structure passing through.Accordingly, the illumination device in the present invention can emitlight in at least multi-directions or all directions. The luminousefficiency of the illumination device may be accordingly enhanced, andthe light shape of the LED illumination device may also be improved.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 and FIG. 2 are schematic structure diagrams illustrating asemiconductor light emitting element according to a preferred embodimentof the present invention.

FIGS. 3-5 are schematic diagrams illustrating different types ofelectrically coupling approaches between a light emitting diodestructure and conductors according to a preferred embodiment of thepresent invention.

FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of awavelength conversion layer according to a preferred embodiment of thepresent invention.

FIG. 8 is a cross-sectional diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 9 is a cross-sectional diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 10 is a schematic diagram illustrating a semiconductor lightemitting element according to another preferred embodiment of thepresent invention.

FIG. 11 is a schematic diagram illustrating a supporting base accordingto a preferred embodiment of the present invention.

FIG. 12 is a schematic diagram illustrating a circuit board according toa preferred embodiment of the present invention.

FIG. 13 is a schematic diagram illustrating a reflector according to apreferred embodiment of the present invention.

FIG. 14 is a schematic diagram illustrating a diamond-like carbon filmaccording to a preferred embodiment of the present invention.

FIG. 15 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 16 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 17 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIGS. 18-20 are schematic diagrams illustrating a transparent substrateinserted or bonded to a supporting base according to a preferredembodiment of the present invention.

FIG. 21 and FIG. 22 are schematic diagrams illustrating a transparentsubstrate bonded to a supporting base with supports according to apreferred embodiment of the present invention.

FIG. 23 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 24 is a schematic diagram illustrating a device frame of anillumination device according to another preferred embodiment of thepresent invention.

FIG. 25 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIGS. 26-29 are schematic diagrams illustrating transparent substratespoint-symmetrically or line-symmetrically disposed on a supportingstructure according to a preferred embodiment of the present invention.

FIG. 30 is a schematic diagram illustrating an illumination deviceaccording to another preferred embodiment of the present invention.

FIG. 31 and FIG. 32 are schematic diagrams illustrating a lamp housingaccording to a preferred embodiment of the present invention.

FIGS. 33-37 are schematic diagrams illustrating an illumination deviceaccording to different embodiments of the present invention.

DETAILED DESCRIPTION

Please refer to FIG. 1 and FIG. 2. FIG. 1 and FIG. 2 are schematicstructure diagrams illustrating a semiconductor light emitting elementaccording to a preferred embodiment of the present invention. As shownin FIG. 1 and FIG. 2, a semiconductor light emitting element 1 includesa transparent substrate 2, a support surface 210, a first main surface21A, a second main surface 21B and at least one light emitting diode(LED) structure 3 providing light in multi-directions. The transparentsubstrate 2, which is a sheet type substrate, has two main surfaces, andone of the surfaces is the support surface 210. The LED structure 3capable of emitting light is disposed on the support surface 210. Alight emitting surface 34 of the LED structure 3 uncovered by thetransparent substrate 2 and at least a part of the support surface 210without the LED structure form the first main surface 21A where lightemitted from. The second main surface 21B is another main surface of thetransparent substrate 2 without the LED structures 3. The dispositiondescribed above may also be reversed, or the LED structure 3 may bedisposed on the two surfaces of the transparent substrate 2. In oneembodiment, LED structures 3 may be disposed on the support surface 210of the transparent substrate 2 interlacedly corresponding to other LEDstructures 3 disposed on the second main surface 21B, such that lightbeams emitted from LED structures 3 on one surface of the transparentsubstrate 2 would not be blocked by other LED structures 3 on anothersurface of the transparent substrate 2. The luminance of thesemiconductor light emitting element 1 may be increased accordingly. Amaterial of the transparent substrate 2, such as sapphire, ceramic,glass, plastic, rubber or etc., may comprise one selected from aluminumoxide (Al2O3), magnesium oxide, beryllium oxide, yttrium oxide, thoriumdioxide, zirconium dioxide, lead zirconium titanate, gallium arsenide,zinc sulfide, zinc selenide, calcium fluoride, magnesium fluoride,silicon carbide (SiC) or polymer. Preferably, the transparent substratemay be a sapphire substrate in a preferred embodiment of the presentinvention. The structure of the sapphire substrate is substantiallysingle crystal. The sapphire substrate has properties of higher lighttransmittance and better heat dissipation capability. The sapphiresubstrate may be used to increase the life time of the semiconductorlight emitting element 1. However, the conventional sapphire substrateused for growing a conventional light emitting diode may be fragile whenapplied in the present invention. According to experiment results of thepresent invention, the transparent substrate 2 of the present inventionis preferably a sapphire substrate having a thickness thicker than orequal to 200 micrometers so as to perform better reliability, supportingperformance and transparency. For effectively emitting light inmulti-directions, including dual-directions or full directions, from thesemiconductor light emitting element 1, the LED structure 3 in thisinvention preferably has a beam angle greater than 180 degrees.Accordingly, the LED structure 3 disposed on the transparent substrate 2may emit light beams from the light emitting surface 34 toward adirection away from the transparent substrate 2, and the LED structure 3may also emit light beams at least partially entering the transparentsubstrate 2. The light beams entering the transparent substrate 2 mayemerge from the second main surface 21B opposite to the first mainsurface 21A, and the light beams entering the transparent substrate 2may also be emitted from a part of the support surface 210 without LEDstructures 3 or emitted from other surface of the transparent substrate2. The semiconductor light emitting element 1 may then be capable ofemitting light in multi-directions including dual-directions or fulldirections. In this invention, an area of the first main surface 21A oran area of the second main surface 21B is larger than 5 times of a totalarea formed from at least one of the light emitting surfaces 34 of eachLED structure, and this is a preferred proportion according to theconsideration of both the luminous efficiency and the heat dissipationperformance.

Additionally, in another preferred embodiment of the present invention,a difference in color temperatures of light beams emitted from the firstmain surface 21A and the second main surface 21B is smaller than orequal to 1500K so as to uniform light emitting effects of thesemiconductor light emitting element 1. In addition, under the thicknesscondition of the transparent substrate 2 mentioned above, a lighttransmittance of the transparent substrate 3 is larger than or equal to70% for light beams having a wavelength range larger than or equal to420 nanometers, or light beams having a wavelength rage smaller than orequal to 470 nanometers.

The present invention is not limited to the embodiment described above.The following description will detail the different embodiments in thepresent invention. To simplify the description, similar components ineach of the following embodiments are marked with identical symbols. Formaking it easier to understand the differences between the embodiments,the following description will detail the dissimilarities amongdifferent embodiments and the identical features will not be redundantlydescribed.

Please refer to FIGS. 3-5. In the present invention, the LED structure 3includes a first electrode 31A and a second electrode 31B for receivingelectricity. The first electrode 31A and the second electrode 31B arerespectively and electrically connected to a first connecting conductor23A and a second connecting conductor 23B on the transparent substrate2. FIGS. 3-5 are schematic diagrams illustrating different types ofelectrically coupling approaches between the light emitting diodestructure 3 and the conductors. FIG. 3 illustrates a horizontal type LEDstructure, the LED structure 3 is formed on the support surface 210 ofthe transparent substrate 2, and the electrodes 31A and 31B are coupledto the connecting conductors 23A and 23B by wire bonding. FIG. 4illustrates a flip chip type LED structure 3, and the LED structure 3 isdisposed reversely and electrically coupled to the transparent substrate2 by the first electrode 31A and the second electrode 31B. The firstelectrode 31A and the second electrode 31B may be directly coupled tothe first connecting conductor 23A and the second connecting conductor23B by welding or adhering. As shown in FIG. 5, the first electrode 31Aand the second electrode 31B are disposed on different surfaces of theLED structure 3, and the LED structure 3 is vertically disposed so as torespectively connect the electrodes 31A and 31B to the connectingconductors 23A and 23B.

Please refer to FIG. 6 and FIG. 7. The semiconductor light emittingelement 1 in the present invention may further include a wavelengthconversion layer 4. The wavelength conversion layer 4 may be selectivelydisposed on the first main surface 21A or/and the second main surface21B, or directly on the LED structures 3. The wavelength conversionlayer 4 may directly contact the LED structures 3, or the wavelengthconversion layer 4 may be separated from the LED structures 3 by adistance without directly contact. The wavelength conversion layer 4contains at least one kind of fluorescent powders such as organicfluorescent powder or inorganic fluorescent powder of garnet series,sulfate series or silicate series. The wavelength conversion layer 4 maythen be able to at least partially absorb a light beam emitted from theLED structure 3 and covert the light beam into another light beamshaving different wavelength range. For example, when blue light beamsare emitted from the LED structure 3, a part of the blue light beams maybe converted into yellow light beams by the wavelength conversion layer4, and the blue light beams and the yellow light beams may be mixed forpresenting white light beams emitted from the semiconductor lightemitting element 1. Additionally, a luminance of the first main surface21A is different from a luminance of the second main surface 21B becausea light source of the first main surface 21A mainly comes from lightbeams directly emitted from the LED structure 3, and a light source ofthe second main surface 21B comes from light beams passing through thetransparent substrate 2. Therefore, in a semiconductor light emittingelement 1 of another preferred embodiment, concentrations of thefluorescent powders in the wavelength conversion layer 4 disposed on thefirst main surface 21A and the wavelength conversion layer 4 disposed onthe second main surface 21B are arranged correspondingly. Preferably, aratio of a fluorescent powder concentration in the wavelength conversionlayer 4 disposed on the first main surface 21A to a fluorescent powderconcentration in the wavelength conversion layer 4 disposed on thesecond main surface 21B may ranges from 1:0.5 to 1:3, or a ratio of thefluorescent powder concentration in the wavelength conversion layer 4disposed on the second main surface 21B to the fluorescent powders inthe wavelength conversion layer 4 disposed on the first main surface 21Amay ranges from 1:0.5 to 1:3. The luminance and the lighting effect ofthe semiconductor light emitting element 1 may become more appropriatefor different applications accordingly. A difference in colortemperatures of light beams emitted from the first main surface 21A andthe second main surface 21B may then be controlled to be smaller than orequal to 1500K. A wavelength converting efficiency and light emittingperformance of the semiconductor light emitting element 1 may then beenhanced.

Please refer to FIG. 8. FIG. 8 is a cross-sectional diagram illustratinga semiconductor light emitting element 1 according to another preferredembodiment of the present invention. As shown in FIG. 8, thesemiconductor light emitting element 1 in this embodiment includes atransparent substrate 2 and at least one LED structure 14 providinglight in multi-directions. The transparent substrate 2 has a supportsurface 210 and a second main surface 21B disposed opposite to eachother. The LED structure 14 is disposed on the support surface 210 ofthe transparent substrate 2. The LED structure 14 includes a firstelectrode 16 and a second electrode 18. The first electrode 16 and thesecond electrode 18 are configured to be electrically connected to otherdevices. A light emitting surface 34 of the LED structure 14 uncoveredby the transparent substrate 2 and at least a part of the supportsurface 210 without the LED structure 14 form a first main surface 21Awhere light emitted from.

The LED structure 14 may include a substrate 141, an N-typedsemiconductor layer 142, an active layer 143 and a P-typed semiconductorlayer 144. In this embodiment, the substrate 141 of the LED structure 14may be attached on the transparent substrate 2 by such as a chip bondinglayer 28. Apart from being used to attach the LED structure 14, a lightintensity may also be increased by optimizing the material property ofthe chip bonding layer 28. For example, a refractive index of the chipbonding layer 28 is preferably between a refractive index of thesubstrate 141 and a refractive index of the transparent substrate 2 soas to increase the intensity of light emitted from the LED structure 14.In addition, the chip bonding layer 28 may be a transparent adhesive orother appropriate bonding material. The first electrode 16 and thesecond electrode 18 are disposed on the side of the LED structure 14opposite to the chip bonding layer 28. The first electrode 16 and thesecond electrode 18 are electrically connected to the P-typedsemiconductor layer 144 and the N-typed semiconductor layer 142respectively (FIG. 8 does not show the connecting relation between thesecond electrode 18 and the N-typed semiconductor layer 142). Horizontallevel of an upper surface of the first electrode 16 and an upper surfaceof the second electrode 18 are substantially the same. The firstelectrode 16 and the second electrode 18 may be metal electrodes, butnot limited thereto. In addition, the semiconductor light emittingelement 1 further includes a first connecting conductor 20, a secondconnecting conductor 22 and a wavelength conversion layer 4. The firstconnecting conductor 20 and the second connecting conductor 22 aredisposed on the transparent substrate 2. The first connecting conductor20 and the second connecting conductor 22 may be metal wires or otherconductive patterns, but not limited thereto. The first electrode 16 andthe second electrode 18 are respectively connected to the firstconnecting conductor 20 and the second connecting conductor 22electrically by wire bonding or welding, but not limited thereto. Thewavelength conversion layer 4 is disposed on the transparent substrate2, and the wavelength conversion layer 4 may cover the LED structure 14.Additionally, the wavelength conversion layer 4 may further cover thesecond main surface 21B of the transparent substrate 2.

In addition, a non-planar structure 12M may be selectively disposed onthe surfaces of the transparent substrate 2 for increasing the intensityof light emitted from the transparent substrate 2 and unifying thedistribution of the emitted light. The non-planar structure 12M may be aconvex geometric structure or a concave geometric structure, such as apyramid, a cone, a hemispheroid, a triangular prism and so forth. Thenon-planar structures 12M may be arranged regularly or randomly.Furthermore, a diamond-like carbon (DLC) film 25 may be selectivelydisposed on the surfaces of the transparent substrate 2 so as to enhancethe thermal conductive ability and the heat dissipating performance.

Please refer to FIG. 9. FIG. 9 is a cross-sectional diagram illustratinga semiconductor light emitting element according to another preferredembodiment of the present invention. Compared with the embodiment shownin FIG. 8, in the semiconductor light emitting element 1 of thisembodiment, the first electrode 16, the second electrode 18 and a firstchip bonding layer 28A are disposed on the same surface of the LEDstructure 14. That the first electrode 16 and the second electrode 18are electrically connected to the first connecting conductor 20 and thesecond connecting conductor 22 by flip chip. The first connectingconductor 20 and the second connecting conductor 22 may respectivelyextend corresponding to the positions of the first electrode 16 and 18.And the first electrode 16 and the second electrode 18 may berespectively connected to the first connecting conductor 20 and thesecond connecting conductor 22 electrically through a second chipbonding layer 28B. The second chip bonding layer 28B may be a conductivebump such as a gold bump or a solder bump, a conductive glue such as asilver glue, or an eutectic layer such as an Au—Sn alloy eutectic layeror an In—Bi—Sn alloy eutectic layer, but not limited to this. Byemploying the second chip bonding layer 28B, the first chip bondinglayer 28A under the LED structure 14 may not be required or may bereplaced by the wavelength conversion layer 4.

Please refer to FIG. 10. FIG. 10 is a schematic diagram illustrating asemiconductor light emitting element according to another preferredembodiment of the present invention. As shown in FIG. 10, asemiconductor light emitting element 310 in this invention includes thetransparent substrate 2, at least one LED structure 3, a firstconnecting electrode 311A, a second connecting electrode 311B and atleast one wavelength conversion layer 4. The LED structure 3 is disposedon the support surface 210 of the transparent substrate 2 and forms afirst main surface 21A where light emitted from. In this embodiment, theLED structure 3 has a beam angle greater than 180 degrees, and at leasta part of light beams emitted from the LED structure 3 penetrate intothe transparent substrate 2. At least a part of the penetrating lightbeams may be emitted from a second main surface 21B which is opposite tothe first main surface 21A, and the other penetrating light beams may beemitted from other surfaces of the transparent substrate 2, so as toform the semiconductor light emitting element 310 providing light inmulti-directions. The first connecting electrode 311A and the secondconnecting electrode 311B are respectively disposed on different sidesof the transparent substrate 2 or on the same side of the transparentsubstrate 2 (not shown in FIG. 10). The first connecting electrode 311Aand the second connecting electrode 311B may be electrodes of thesemiconductor light emitting element 310 respectively formed byextension parts of a first connecting conductor and a second connectingconductor on the transparent substrate 2, and the first connectingelectrode 311A and the second connecting electrode 311B are electricallyconnected to the LED structure 3 accordingly. The wavelength conversionlayer 4 at least covers the LED structure 3 and exposes at least a partof the first connecting electrode 311A and the second connectingelectrode 311B. The wavelength conversion layer 4 at least partiallyabsorbs a light beam emitted from the LED structure 3 or/and thetransparent substrate 2, and coverts the light beam into alight beamhaving another wavelength range. The converted light and the light whichare not absorbed by the wavelength conversion layer 4 are mixed toextend the total wavelength range of the light beams emitted from thesemiconductor light emitting element 310 and improve the light emittingperformance of the semiconductor light emitting element 310. Because thesemiconductor light emitting element 310 in this embodiment includes thefirst connecting electrode 311A and the second connecting electrode 311Brespectively disposed on the transparent substrate 2, traditional LEDpackaging process may be omitted and the semiconductor light emittingelement 310 may be independently manufactured and then combined with anappropriate supporting base. Accordingly, the total manufacturing yieldmay be improved, the structure may be simplified and applications of thecorresponding supporting base may also be increased.

Please refer to FIG. 11. An illumination device 11 is provided in thisembodiment. The illumination device 11 includes a supporting base 5 andthe semiconductor light emitting element described above. Thetransparent substrate 2 of the semiconductor light emitting element maystand on (or lie on) and be electrically coupled to the supporting base5. A first angle θ1 exists between the transparent substrate 2 and thesupporting base 5. The first angle θ1 may be fixed or be adjustedaccording to the light shape requirement of the illumination device.Preferably, the first angle θ1 ranges from 30 degrees to 150 degrees.

Please refer to FIG. 12. The supporting base 5 of the illuminationdevice 11 in the present invention may further include a circuit board 6electrically coupled to a power supply. The circuit board 6 iselectrically coupled to a first connecting conductor and a secondconnecting conductor (not shown in FIG. 12) so as to be electricallyconnected to the LED structure 3. The power supply may then provideelectricity to the LED ship 3 for emitting light via the circuit board6. In other preferred embodiment of the present invention, the LEDstructure 3 may also be electrically connected to the supporting basedirectly via the first connecting conductor and the second connectingconductor (not shown in FIG. 12) without the circuit board 6, and thepower supply may provide electricity to the LED ship 3 via thesupporting base 5.

Please refer to FIG. 13. The illumination device 11 of the presentinvention may further include a reflector or filter 8 disposed on thesecond main surface 21B or the support surface 210. The reflector orfilter 8 may be used to reflect at least a part of light beams emittedfrom the LED structure 3 and passing through the transparent substrate2. At least apart of the reflected light beams may be changed to beemitted from the first main surface 21A. The reflector 8 may include atleast one metal layer or a Bragg reflector, but not limited thereto. TheBragg reflector may be composed of a plurality of insulating thin filmswith different refractive indexes disposed in a stack configuration, orthe Bragg reflector may be composed of a plurality of insulating thinfilms with different refractive indexes and a plurality of metal oxidelayers disposed in a stack configuration.

Please refer to FIG. 14. The illumination device 11 of the presentinvention may further include a diamond-like carbon (DLC) film 9disposed on the support surface 210 or/and the second main surface 21Bof the transparent substrate 2 so as to enhance the thermal conductiveability and the heat dissipating performance.

Please refer to FIG. 15. FIG. 15 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. As shown in FIG. 15, an illumination device 10 inthis embodiment includes a supporting base 26 and the semiconductorlight emitting element described in the present invention. Thesemiconductor light emitting element includes a transparent substrate 2and at least one LED structure 14. The semiconductor light emittingelement may be at least partially embedded into the supporting base 26.An electrode 30 and an electrode 32 of the supporting base 26 areelectrically connected to the connecting conductors of the semiconductorlight emitting element. Driving voltage V+ and V− may be accordinglyprovided through the electrodes 30 and 32 respectively to the LEDstructure 14 for emitting the light beam L. The LED structure 14includes a first electrode 16 and a second electrode 18 respectively andelectrically connected to the first connecting conductor 20 and thesecond connecting conductor 22 by wire bonding, but not limited thereto.Additionally, the LED structure 14 has a beam angle greater than 180degrees or has a plurality of light emitting surfaces, and then theillumination device 10 may emit light beams from the first main surface21A and the second main surface 21B. Furthermore, because some of thelight beams may be emitted directly from the LED structure 14 and/or theother four side surfaces of the transparent substrate 2, theillumination device 10 may accordingly emit light from multi sides orsix sides or in full directions.

The semiconductor light emitting element may further include awavelength conversion layer 4 selectively disposed on the LED structure14, the first main surface 21A or the second main surface 21B. Thewavelength conversion layer 4 may at least partially absorb a light beamemitted from the LED structure 14 and covert the light beam into anotherlight beam having different wavelength range so as to emit light withspecific color or light having a wider wavelength range from theillumination device 10. For example, when blue light beams are emittedfrom the LED structure 14, a part of the blue light beams may beconverted into yellow light beams by the wavelength conversion layer 4,and the blue light beams and the yellow light beams may be mixed forpresenting white light beams emitted from the illumination device 10.Additionally, the transparent substrate 2 may be directly or indirectlyfixed on the supporting base 26 in a parallel state or a non-parallelstate. For instance, the transparent substrate 2 may be vertically fixedon the supporting base 26 by mounting a side wall of the transparentsubstrate 2 with the supporting base 26 directly, or the transparentsubstrate 2 may be horizontally disposed on the supporting base 26, butnot limited thereto. The transparent substrate 2 preferably includesmaterials with high thermal conductivity, and heat generated from theLED structure 14 may be accordingly dissipated to the supporting base 26through the transparent substrate 2, such that the high power LEDstructures can be applied in the illumination device of the presentinvention accordingly. However, in a preferred embodiment of the presentinvention, at the same power consumption of the illumination device,more LED structures with relatively low power are dispersed on thetransparent substrate 2 so as to fully utilize the thermal conductivitycapability of the transparent substrate 2. For example, a power of theLED structure in this embodiment may be equal to or lower than 0.2 watt,but not limited thereto.

Please refer to FIG. 16. FIG. 16 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. Compared with the illumination shown in FIG. 15, anillumination device 10′ in this embodiment includes a plurality of LEDstructures 14, and at least some of the LED structures 14 areelectrically connected to each other in series. Each of the LEDstructures 14 includes the first electrode 16 and the second electrode18. The first electrode 16 of one LED structure 14 disposed on one endof the series is electrically connected to the first connectingconductor 20, and the second electrode 18 of another LED structure 14disposed on another end of the series is electrically connected to thesecond connecting conductor 22, but not limited thereto. The LEDstructures 14 may be electrically connected in series or in parallel.The LED structures 14 may be LED structures emitting identical color,such as blue LED structures, or LED structures emitting different colorsmay also be applied and combined according to different demands. Theillumination device 10′ may emit light in much more different colors byfurther employing the wavelength conversion layer 4 according to thepresent invention.

Please refer to FIG. 17. FIG. 17 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. Compared with the illumination devices shown in FIG.15 and FIG. 16, an illumination device 50 in this embodiment furtherincludes a support 51 configured to connect the semiconductor lightemitting element and the supporting base 26. The transparent substrate 2of the semiconductor light emitting element is fixed on a side of thesupport 51 by a unit bonding layer 52, and another side of the support51 may be disposed on or inserted into the supporting base 26.Additionally, the support 51 is flexible so as to form an angle betweenthe transparent substrate 2 and the supporting base 26, and the angleranges from 30 degrees to 150 degrees. A material of the support 51 mayinclude one selected from aluminum, composite metallic material, copperconductor, electric wire, ceramic substrate, printed circuit board, orother appropriate materials.

Please refer to FIGS. 18-20. When the transparent substrate 2 in thepresent invention is disposed on a supporting base 5, the transparentsubstrate 2 may be inserted or bonded to the supporting base 5.

As shown in FIG. 18. When the transparent substrate 2 is disposed on thesupporting base 5, the transparent substrate 2 is inserted in to asingle socket 61 of the supporting base 5, and the semiconductor lightemitting element may be electrically coupled to the single socket 61 viaconnecting conductors. The LED structures (not shown in FIG. 18) on thetransparent substrate 2 have to be electrically coupled to a powersupply from or through the supporting base 5, and at least part of theconductive pattern or the connecting conductors are extended to an edgeof the transparent substrate 2 and integrated in to an connecting fingerhaving a plurality of conductive contact sheets or an electricallyconnecting port such as the connecting electrodes 311A and 311Bdescribed above (not shown in FIG. 18). When the transparent substrate 2is inserted into the socket 61, the LED structure (not shown in FIG. 18)may then receive electricity from or through the supporting base 5, andthe transparent substrate 2 may be fixed by the socket 61 of thesupporting base 5 accordingly.

Please refer to FIG. 19. FIG. 19 is a schematic diagram illustrating thetransparent substrate 2 inserted into a multi sockets of the supportingbase 5. In this embodiment, the transparent substrate 2 has a dual-pinstructure. One of the pins may be configured as a positive electrode ofthe device, and another one of the pins may be configured as a negativeelectrode of the device. Both of the pins have at least one conductivecontact sheet respectively so as to act as connecting ports.Accordingly, there are at least two sockets 61 having correspondingshape and size with the pins so as to smoothly insert the transparentsubstrate 2 into the supporting base 5 and provide electricity to theLED structure.

Please refer to FIG. 20. The transparent substrate 2 is bonded to thesupporting base 5 by the device bonding layer. In the bonding process,metal materials such as gold, tin, indium, bismuth or silver may be usedin combining or welding the transparent substrate 2 and the supportingbase 5. Additionally, conductive silica gel or epoxy material may alsobe used in fixing the transparent substrate 2 on the supporting base 5.The conductive pattern and the connecting conductors of thesemiconductor light emitting element may be electrically connected tothe supporting base via the device bonding layer accordingly.

Please refer to FIG. 21 and FIG. 22. The supporting base 5 of theillumination device 11 described in the present invention may be asubstrate comprising one selected from metal such as aluminum, compositemetallic material including aluminum, copper conductor, electric wire,ceramic substrate or printed circuit board. There is at least onesupport 62 on a surface or edge of the supporting base 5. The support 62may be separated from the supporting base 5, or the support 62 and thesupporting base 5 are monolithically integrated. The semiconductor lightemitting element may be electrically coupled to the support 62 bybonding, and a device bonding layer 63 is used to fix the transparentsubstrate 2 on the supporting base 5. The first angle θ1 is maintainedbetween the transparent substrate 2 and a surface of the supporting base5 without supports. The semiconductor light emitting elements may alsobe disposed on the surface of the supporting base 5 without supports soas to enhance the light emitting performance of the illumination device11. Additionally, the semiconductor light emitting element may also beinserted and connected to the support 62 (not shown in FIG. 21 and FIG.22), wherein a connector may be used to connect the semiconductor lightemitting element and the support (and/or the support and the supportingbase) so as to fix the transparent substrate 2 on the supporting base 5.Because the supporting base 5 and the support 62 are flexible, it ismore convenient to apply the present invention to differentapplications. Moreover, the color variety of the illumination device 11may be enhanced for different demands by combining using thesemiconductor light emitting elements having different light color.

Please refer to FIG. 23. As shown in FIG. 23, an illumination device inthis embodiment includes at least one semiconductor light emittingelement 1 and a supporting base 5. The supporting base 5 includes atleast one support 62 and at least one circuit pattern P. An end of thetransparent substrate of the semiconductor light emitting element 1 iselectrically coupled to the support 62 so as to avoid or reduce theshielding influence caused by the support 62 for light emitting from thesemiconductor light emitting element 1. The supporting base 5 may beselected from metal such as aluminum, composite metallic materialincluding aluminum, copper conductor, electric wire, ceramic substrateor printed circuit board. The support 62 may be formed by cutting andbending a part of the supporting base 5 to form an angle (as the firstangle θ1 shown in FIG. 21 and FIG. 22). The circuit pattern P isdisposed on supporting base 5, and the circuit pattern P has at leastone set of electrical port to be electrically connected to a powersupply. Another part of the circuit pattern P extends on the support 62so as to be electrically connected to the semiconductor light emittingelement 1, and the semiconductor light emitting element 1 may than beelectrically connected to the power supply via the circuit pattern P ofthe supporting base 5. In addition, the supporting base 5 may furtherinclude at least one hole H or at least one gap G, and fixing devicessuch as screws, nails or bolts may be used to combine the supportingbase 5 with other device via the hole H or the gap G according to theapplication conditions of the illumination device. Meanwhile, the hole Hor the gap G may also be used to increase the heat radiating area andenhance the heat dissipation capability of the illumination device.

Please refer to FIG. 24. FIG. 24 is a schematic diagram illustrating adevice frame of an illumination device according to another preferredembodiment of the present invention. As shown in FIG. 24, a device frame322 in this embodiment includes a supporting base 5 and at least onesupport 62. Compared with the embodiment shown in FIG. 23, the support62 in this embodiment includes at least one stripe part 342 and anopening 330. The electrode 30 and the electrode 32 are respectivelydisposed on two sides of the opening 330. The stripe part 342 forms atleast one wall of the opening 330. One semiconductor light emittingelement described in the present invention is disposed correspondinglyto the opening 330 and electrically coupled to the support 62. Theconnecting conductors of the semiconductor light emitting element iselectrically connected to the electrode 30 and the electrode 32 so as todrive the semiconductor light emitting element by a power supply via thesupport 62 and the circuit pattern on the supporting base 5. A size ofthe opening 330 may not be smaller than a main light emitting surface ofthe semiconductor light emitting element so as to prevent light beamsemitted from the semiconductor light emitting element from being blockedby the support 62. A connection part between the support 62 and thesupporting base 5 may be adjustable so as to adjust the angle betweenthe support 62 and the supporting base 5 as required.

Please refer to FIG. 24 and FIG. 25. FIG. 25 is a schematic diagramillustrating an illumination device according to another preferredembodiment of the present invention. Compared with the embodiment shownin FIG. 24, an illumination device 302 shown in FIG. 25 further includesat least one support 62 having a plurality of openings 330. The openings330 are respectively disposed on two opposite sides of the support 62,and the stripe part 342 forms at least one wall of each opening 330. Thesemiconductor light emitting element 310 are disposed correspondingly tothe openings 330, and the conductive pattern or the connectingelectrodes (not shown in FIG. 25) of each semiconductor light emittingelement 310 are respectively disposed correspondingly and electricallyconnected to the electrode 30 and 32. The illumination device 302 inthis embodiment may further include a plurality of the supports 62. Thesupport 62 is disposed between the semiconductor light emitting element1 and the supporting base 5. A length of the support 62 maysubstantially range from 5.8 to 20 um. Angles between the supportingbase 5 and the supports 62 with the semiconductor light emitting elementdisposed on may be modified respectively. In other words, an anglebetween the supporting base 5 and at least one of the supports 62 may bedifferent from an angle between the supporting base 5 and another one ofthe supports 62 so as to perform required light emitting effects, butnot limited thereto. Additionally, semiconductor light emitting elementsemitting light having different wavelength ranges may be disposed on anidentical support or on different supports so as to enrich the coloreffect of the illumination device.

For enhancing the luminance and improving the light emitting effect, inan illumination device of another preferred embodiment of the presentinvention, a plurality of the semiconductor light emitting elementscomprising the transparent substrates are disposed on the supportingbases detailed above or on other supporting structures. Apoint-symmetric distribution or a line-symmetric distribution may beapplied. The semiconductor light emitting elements comprising thetransparent substrates may be point-symmetrically disposed on thesupporting structure or line-symmetrically disposed on the supportingstructure. Please refer to FIGS. 26-29. In the illumination devices ofthe embodiments shown in FIGS. 26-29, the semiconductor light emittingelements are disposed on the supporting structures having differentshapes. The light beams emitted from the illumination devices 11 may beuniform because of the point-symmetric distribution or theline-symmetric distribution (the LED structures are not shown in FIGS.26-29). The light emitting effects of the illumination devices 11 may befurther improved by adjusting the first angle described above. As shownin FIG. 26, the semiconductor light emitting elements arepoint-symmetrically arranged and form an angle between each other in 90degrees. Therefore, at least two of the semiconductor light emittingelements may face any one of the four sides of the illumination device11. As shown in FIG. 27, the angle between the semiconductor lightemitting elements is smaller than 90 degrees. As shown in FIG. 29, theangle between the semiconductor light emitting elements is larger than90 degrees. In another preferred embodiment of the present invention(not shown), the semiconductor light emitting elements may beasymmetrically disposed and at least apart of the semiconductor lightemitting elements may be disposed in a crowd or separately disposed soas to perform required light shape according to different applicationsof the illumination device.

Please refer to FIG. 30. FIG. 30 is a schematic diagram illustrating anillumination device according to another preferred embodiment of thepresent invention. As shown in FIG. 30, an illumination device 301includes a semiconductor light emitting element 310 and a support 321.The support 321 includes an opening 330, and the semiconductor lightemitting element 310 is disposed correspondingly to the opening 330. Inthis embodiment, an external part of the support 321 may be work as apin or be bent to form a connecting pad required in surface mounting soas to be fixed and electrically connected to other electrical circuitunits. A light emitting surface of the semiconductor light emittingelement 310 is disposed in the opening 330, and the illumination device301 may still emit light from multi sides or six sides accordinglywhether the support 321 is transparent or not.

Please refer to FIG. 31. An illumination device is provided in thisembodiment of the present invention. The illumination device includes alamp housing 7 having a tube shape, at least one semiconductor lightemitting element 1 and a supporting structure 60. The semiconductorlight emitting element 1 is disposed on the supporting structure 60, andat least a part of the semiconductor light emitting element 1 isdisposed in space formed by the lamp housing 7. Please refer to FIG. 32.When more semiconductor light emitting elements 1 are disposed in thelamp housing 7, the first main surfaces 21A of the semiconductor lightemitting elements 1 are arranged separately and not parallel to oneanother. Additionally, the semiconductor light emitting elements 1 areat least partially disposed in space formed by the lamp housing 7, andthe semiconductor light emitting elements 1 are not closely adjacent toan inner wall of the lamp housing 7. Preferably, a distance D betweenthe semiconductor light emitting element 1 and the lamp housing 7 may beequal to or larger than 500 micrometers. However, the lamp housing 7 mayalso be formed by filling glue, and the lamp housing 7 may at leastpartially cover and directly contact the semiconductor light emittingelement 1.

Please refer to FIG. 33. According to another embodiment of the presentinvention, an illumination device 303 includes at least one lightemitting element 1, a supporting base 5, and at least one support 62.The light emitting element 1 is disposed on the support 62 and thesupport 62 is coupled to the supporting base 5. In contrast to theembodiment as disclosed in FIG. 21, the support 62 of this embodiment isinclined that at least a part of the support 62 may be nearer to acentral axis D1 of the supporting base 5. More specifically to thisembodiment, the illumination device 303 includes two supports 62 and twolight emitting elements 1 disposed on the two supports 62 respectively.The two supports 62 are connected to the supporting base 5 for betterheat conduction. The supports 62 are inclined inward relative to thecentral axis D1 of the supporting base 5, and a first angle θ1 betweenthe light emitting element 1 and the supporting base 5 as shown in thefigure (that is, an angle between the support 62 and the supporting base5) may range from 45 degrees to 75 degrees, such that the size of theillumination device 303 can be reduced in contrast to the embodiment asdisclosed in FIG. 21. The luminance of the light illumination device 303near to the central axis D1 of the supporting base 5 is increased aswell.

Please refer to FIG. 34-37. In contrast to the above embodiments of thepresent invention, illumination devices 304/305/306/307 according todifferent embodiments of the present invention are more flexible forvarious applications, and illumination devices 304/305/306/307 may becrystal lamps. The illumination device 304 includes at least one lightemitting element 1, a supporting base 5, and at least one support 62, asshown in FIG. 34. The support 62 may further include a first connectedportion 621 and a second connected portion 623. One end of the secondconnected portion 623 is disposed on the supporting base 5, and theother end of the second connected portion 623 corresponding to thesupporting base 5 is connected to one end of the first connected portion621. The light emitting element 1 is disposed on the other end of thefirst connected portion 621 corresponding to the second connectedportion 623. The first connected portion 621 may further be rotatablerelative to the second connected portion 623. More specifically to thisembodiment, the first connected portion 621 extends outward or inwardrelative to the central axis D1 of the supporting base 5, and a secondangle θ2 between the first connected portion 621 and the secondconnected portion 623 may range from 135 degrees to 175 degrees, suchthat the luminance near to the central axis D1 may be increased ordecreased for different applications. The second connected portion 623is perpendicular to the supporting base 5, but not limited to this. Athird angle θ3 between the second connected portion 623 and thesupporting base 5 may range from 45 degrees to 85 degrees according tosome other embodiments of the present invention. The second connectedportion 623 may further be rotatable relative to the supporting base 5.According to this embodiment, the luminance near to the central axis D1of the supporting base 5 of the illumination device 304 can be higherthan the embodiment as disclosed in FIG. 21, and the size of theillumination device 304 can be reduced.

Please refer to FIG. 35. In contrast to the embodiment as shown in FIG.34, an illumination device 305 may include at least one support 62including a first connected portion 621 and a second connected portion623, wherein a light emitting element 1 is disposed on one end of thefirst connected portion 621 and the end of the first connected portion621 is connected to one end of the second connected portion 623, and theother end of the second connected portion 623 corresponding to the firstconnected portion 621 is coupled to a supporting base 5. The other endof the first connected portion 621 corresponding to the second connectedportion 623 may extend inward or outward relative to a central axis D1of the supporting base 5, and a second angle θ2 between the firstconnected portion 621 and the second connected portion 623 may rangefrom 5 degrees to 45 degrees for increasing the luminance near to thecentral axis C1. The other components of the illumination device 305 maybe same as the illumination device 304 and are not reiterated here.

Additionally, please refer to FIG. 36. A support 62 of an illuminationdevice 306 may be flexibly formed as an arc-shaped structure. A radiusof the arc-shaped support 62 ranges from 10 millimeters to 200millimeters, and a center of the arc-shaped structure may be near to oraway from a central axis D1 of a supporting base 5 of the illuminationdevice 306. Additionally, according to another embodiment as shown inFIG. 37, an illumination device 307 includes a support 62 which may beformed as a parabolic structure. Two light emitting elements 1 aredisposed on the opposite sides of a central axis D1 of the parabolicsupport 62. Not limited to this, the support 62 can be an ellipse-shapedstructure.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. An illumination device, comprising: at least onelight emitting element, comprising: a transparent substrate, having asupport surface and a second main surface disposed opposite to eachother; and a plurality of light emitting diode (LED) structures, whereinat least some of the LED structures are disposed on the support surfaceand form a first main surface where light emitted from with at least apart of the support surface without the LED structures, wherein lightemitted from at least one of the LED structures passes through thetransparent substrate and emerges from the second main surface; and asupporting base; and at least one support, coupled to the supportingbase; wherein the light emitting element is disposed on the support, andat least apart of the support is inclined inward or outward relative tothe central axis of supporting base.
 2. The illumination device of claim1, wherein a first angle exists between the light emitting element andthe supporting base, and the first angle ranges from 45 degrees to 75degrees.
 3. The illumination device of claim 1, wherein the supportcomprises a first connected portion and a second connected portion, thesecond connected portion is disposed on the supporting base, the firstconnected portion is rotatably connected to the second connectedportion, wherein a second angle exists between the first connectedportion and the second connected portion.
 4. The illumination device ofclaim 3, wherein the first connected portion extends outward relative toa central axis of the supporting base and the second angle ranges from135 degrees to 175 degrees.
 5. The illumination device of claim 3,wherein the first connected portion extends inward relative to a centralaxis of the supporting base and the second angle ranges from 5 degreesto 45 degrees.
 6. The illumination device of claim 3, wherein a thirdangle exists between the second connected portion and the supportingbase and the third angle ranges from 45 degrees to 85 degrees.
 7. Theillumination device of claim 1, wherein the support is an arc-shapedstructure.
 8. The illumination device of claim 7, wherein a radius ofthe arc-shaped support ranges from 10 mm to 200 mm, a center of thearc-shaped structure is near to or away from a central axis of thesupporting base.
 9. The illumination device of claim 1, wherein thesupport is a parabolic structure or an ellipse-shaped structure.